IndiumV3, Chine, Analysis, bibRecord, 001002

The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

Identifieur interne : 001002 ( Chine/Analysis ); précédent : 001001; suivant : 001003

The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

Auteurs : RBID : Pascal:08-0272027

Descripteurs français

Pascal (Inist)
- Faisceau ion, Couche mince, Méthode IBAD, Température ambiante, Propriété optique, Propriété électrique, Diffraction RX, Microscopie force atomique, Spectre absorption, Effet Hall, Résistivité électrique, Ecran électromagnétique, Oxyde d'indium, Oxyde d'étain, Carbonate polymère, Substrat polymère, 8115J, 7866, 7350, 6855J.

English descriptors

KwdEn :
- Absorption spectra, Ambient temperature, Atomic force microscopy, Electric resistivity, Electrical properties, Electromagnetic shielding, Hall effect, Indium oxide, Ion beam assisted deposition method, Ion beams, Optical properties, Polycarbonates, Thin films, Tin oxide, XRD.

Abstract

Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.

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Pascal:08-0272027

Le document en format XML

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<author><name sortKey="Meng, Li Jian" uniqKey="Meng L">Li-Jian Meng</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431</s1>
<s2>4200-072 Porto</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>4200-072 Porto</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centro de Física, Universidade do Minho</s1>
<s2>4700 Braga</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>4700 Braga</wicri:noRegion>
</affiliation>
</author>
<author><name>JINSONG GAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics of Chinese Academy of Science, PO Box 1024, 16# East Nanhu Road</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Dos Santos, M P" uniqKey="Dos Santos M">M. P. Dos Santos</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>CeFITec, Universidade Nova de Lisboa/Departamento de Física, Universidade de Évora</s1>
<s3>PRT</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Portugal</country>
<wicri:noRegion>CeFITec, Universidade Nova de Lisboa/Departamento de Física, Universidade de Évora</wicri:noRegion>
</affiliation>
</author>
<author><name>XIAOYI WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics of Chinese Academy of Science, PO Box 1024, 16# East Nanhu Road</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
</placeName>
</affiliation>
</author>
<author><name>TONGTONG WANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics of Chinese Academy of Science, PO Box 1024, 16# East Nanhu Road</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Changchun</settlement>
<region type="province">Jilin</region>
<region type="groupement">Dongbei</region>
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<publicationStmt><idno type="inist">08-0272027</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0272027 INIST</idno>
<idno type="RBID">Pascal:08-0272027</idno>
<idno type="wicri:Area/Main/Corpus">006A13</idno>
<idno type="wicri:Area/Main/Repository">005C15</idno>
<idno type="wicri:Area/Chine/Extraction">001002</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Ambient temperature</term>
<term>Atomic force microscopy</term>
<term>Electric resistivity</term>
<term>Electrical properties</term>
<term>Electromagnetic shielding</term>
<term>Hall effect</term>
<term>Indium oxide</term>
<term>Ion beam assisted deposition method</term>
<term>Ion beams</term>
<term>Optical properties</term>
<term>Polycarbonates</term>
<term>Thin films</term>
<term>Tin oxide</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Faisceau ion</term>
<term>Couche mince</term>
<term>Méthode IBAD</term>
<term>Température ambiante</term>
<term>Propriété optique</term>
<term>Propriété électrique</term>
<term>Diffraction RX</term>
<term>Microscopie force atomique</term>
<term>Spectre absorption</term>
<term>Effet Hall</term>
<term>Résistivité électrique</term>
<term>Ecran électromagnétique</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Carbonate polymère</term>
<term>Substrat polymère</term>
<term>8115J</term>
<term>7866</term>
<term>7350</term>
<term>6855J</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.</div>
</front>
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<fA06><s2>7</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium R on Advances in Transparent Electronics: From Materials to Devices. EMRS 2006 Conference, Nice, France</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>MENG (Li-Jian)</s1>
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<fA11 i1="02" i2="1"><s1>JINSONG GAO</s1>
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<fA11 i1="03" i2="1"><s1>DOS SANTOS (M. P.)</s1>
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<fA11 i1="04" i2="1"><s1>XIAOYI WANG</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>TONGTONG WANG</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>FORTUNATO (Elvira)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>HOSONO (Hideo)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>GRANQVIST (Claes)</s1>
<s9>ed.</s9>
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<fA12 i1="04" i2="1"><s1>WAGER (John)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Departamento de Física, Instituto Superior de Engenharia do Porto, Rua Dr. António Bernardino de Almeida, 431</s1>
<s2>4200-072 Porto</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Centro de Física, Universidade do Minho</s1>
<s2>4700 Braga</s2>
<s3>PRT</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics of Chinese Academy of Science, PO Box 1024, 16# East Nanhu Road</s1>
<s2>Changchun 130033</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>CeFITec, Universidade Nova de Lisboa/Departamento de Física, Universidade de Évora</s1>
<s3>PRT</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>CENIMAT, FCT-UNL, Campus de Caparica</s1>
<s2>2829-516 Caparica</s2>
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<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA20><s1>1365-1369</s1>
</fA20>
<fA21><s1>2008</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA43 i1="01"><s1>INIST</s1>
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<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
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<fA47 i1="01" i2="1"><s0>08-0272027</s0>
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<fA60><s1>P</s1>
<s2>C</s2>
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<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of the films have been characterized by X-ray diffraction, atomic force microscopy, optical transmittance, ellipsometric and Hall effect measurements. The effect of the ion beam energy on the properties of the films has been studied. The optical parameters have been obtained by fitting the ellipsometric spectra. It has been found that high quality ITO film (low electrical resistivity and high optical transmittance) can be obtained at low ion beam energy. In addition, the ITO film prepared at low ion beam energy gives a high reflectance in IR region that is useful for some electromagnetic wave shielding applications.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H66</s0>
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<fC02 i1="03" i2="3"><s0>001B70C50</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Faisceau ion</s0>
<s5>01</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Ion beams</s0>
<s5>01</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>02</s5>
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<fC03 i1="03" i2="3" l="ENG"><s0>Ion beam assisted deposition method</s0>
<s5>03</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Température ambiante</s0>
<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="05" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
</fC03>
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<s5>07</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Effet Hall</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Hall effect</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Résistivité électrique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Electric resistivity</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Ecran électromagnétique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Electromagnetic shielding</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>15</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Carbonate polymère</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Polycarbonates</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Substrat polymère</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8115J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>175</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Advances in Transparent Electronics: from materials to devices I. Symposium R</s1>
<s3>Nice FRA</s3>
<s4>2006-05-29</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri